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advanced analog technology, inc. ? ?????? ? ? advanced analog technology, inc . ? page 1 of 25 v2.0 aat 86 60 series product information presented is current as of publication da te. details are subject to change without notice. one-cell li-ion battery protection ic features z ideal for one-cell rechargeable li-ion battery packs z high accuracy voltage detection z low current consumption: a 3 supply current (typical) a 1 . 0 shutdown current z 3-level over current detection: over-current level 1 /over current level 2 / short circuit z wide operating temperature range: c 85 to c 40 + ? z small sot26 package pin configuration null out d vn out c gnd dd v general description the aat8660 series are designed to protect one-cell rechargeable li-ion battery pack against over-charge, over-discharge, over-current and short circuit. they use cmos process to provide high accuracy voltage detection and low current consumption. each of the aat8660 devices incorporates voltage comparators, bandgap reference voltage generator, signal delay circuit, short circuit detector, and digital control circuit. in the charge process, when the battery voltage is charged to a value greater than 1 c v (over-charge threshold voltage), the output of out c pin switches to the low level, i.e., the vn pin level. the output of out c pin will switch to high level when the battery voltage falls lower than v c2 (over-charge release voltage), or when the charger is disconnected from the battery pack and the battery voltage level ranges between v c1 and v c2 . during the discharge process, when the battery voltage drops to a value lower than 1 d v (over-discharge threshold voltage), the output of out d pin switches to low level immediately after the internal delay time elapses. the output of out d pin will switch to high level when the battery voltage is at a level higher than 2 d v (over-discharge release voltage).
advanced analog technology, inc. ? ?????? ? ? advanced analog technology, inc . ? page 2 of 25 v2.0 aat 86 60 series over current level 1 voltage ( 1 oc v ) is used to monitor the amount of di scharge current. if the discharge current is high enough to cause vn pin voltage increase to a value greater than 1 oc v, the output of out d pin will switch to a low level after a delay time 1 oc t . if the load is removed from battery pack, the output of out d will change to a high level again. the mechanism of short circuit protection is identical to a discharge current. if the short circuit current is high enough to cause vn pin voltage increase to greater than short v , the output of out d pin will move to the low level after a delay time short t , and the output of out d level will change to high when the load is removed from battery pack. block diagram: dd v gnd vn out d out c
advanced analog technology, inc. ? ?????? ? ? advanced analog technology, inc . ? page 3 of 25 v2.0 aat 86 6 0 series pin description pin no name i/o description 1 out d o discharge control pin which connects to external mosfet gate 2 vn i voltage detection pin between vn and gnd 3 out c o charge control pin which connects to external mosfet gate. 4 null w n ull pad. 5 dd v i power supply input pin 6 gnd i ground absolute maximum ratings characteristics symbol value unit supply voltage dd v 3 . 0 ? to 8.0 v vn pin input voltage vn v 20 v dd ? to 3 . 0 v dd + v out d pin output voltage dout v 3 . 0 ? to 3 . 0 v dd + v out c pin output voltage cout v 3 . 0 v vn ? to 3 . 0 v dd + v power dissipation d p 150 mw operating temperature range c t 40 ? to +85 c storage temperature range storage t 40 ? to +125 c recommended operating conditions parameter test condition min max unit supply voltage, dd v voltage defined as dd v to gnd 1.5 7.0 v out d output voltage gnd dd v v out c output voltage vn dd v v operation voltage and operation current parameter test condition min typ max unit supply current at normal operation mode dd v =3.3v; vn=0v; gnd=0v 3.0 6.0 a standby current at power down mode - - 0.1 a operation voltage between dd v and vn 1.5 20.0 v
advanced analog technology, inc. ? ?????? ? ? advanced analog technology, inc . ? page 4 of 25 v2.0 aat 86 6 0 series aat8660a detection voltage and delay time ( c 25 ) parameter symbol test condition min typ max unit over charge threshold voltage 1 c v detect rising edge of supply voltage 4.275 4.325 4.375 v over charge release voltage 2 c v detect falling edge of supply voltage v c1 -0.35 v c1 -0.25 v c1 -0.15 v over discharge threshold voltage 1 d v detect falling edge of supply voltage 2.420 2.500 2.580 v over discharge release voltage 2 d v detect rising edge of supply voltage v d1 +0.3 v d1 +0.4 v d1 +0.5 v over charge delay time 1 c t 3.6v v dd = to 4.5v 0.700 1.000 1.300 s over discharge delay time 1 d t v 6 . 3 v dd = to 2.4v 87.5 125.0 162.5 ms over current level 1 detection voltage 1 oc v detect rising edge of ?vn? pin voltage ( out d response with t oc1 delay time) 130 150 170 mv over current level 2 detection voltage 2 oc v detect rising edge of ?vn? pin voltage ( out d response with t oc2 delay time) 400 500 600 mv short circuit detection voltage short v v 0 . 3 v dd = , detect rising edge of ?vn? pin voltage ( out d response with short t delay time) 7 . 1 v dd ? 3 . 1 v dd ? 9 . 0 v dd ? v over current level 1 detection delay time 1 oc t v 0 . 3 v dd = 5.6 8.0 10.4 ms over current level 2 detection delay time 2 oc t room temp. ? low or high temp. ? v 0 . 3 v dd = 1.4 1.1 2.0 2.0 2.6 3.4 ms ms short circuit detection delay time short t v 0 . 3 v dd = 10 50 s charger detection voltage chr v detect rising edge of ? out d ? pin voltage (when v d1 v dd v d2 ) 0 . 2 ? 3 . 1 ? 6 . 0 ? v out c high level resistance coh r v 5 . 3 v dd = ; v 0 . 3 c out = ; v 0 vn = 1 2 10 k out c low level resistance col r v 5 . 4 v dd = ; v 5 . 0 c out = ; v 0 vn = 150 602 2,380 k out d high level resistance doh r v 5 . 3 v dd = ; v 0 . 3 d out = ; v 0 vn = 2.5 5.0 10.0 k out d low level resistance dol r v 8 . 1 v dd = ; v 5 . 0 d out = ; v 8 . 1 vn = 2.5 5.0 10.0 k internal resistance between vn and dd v vnd r v 8 . 1 v dd = ; v 0 vn = 100 300 900 k internal resistance between vn and gnd vng r v 5 . 3 v dd = ; v 5 . 3 vn = 10 20 40 k
advanced analog technology, inc. ? ?????? ? ? advanced analog technology, inc . ? page 5 of 25 v2.0 aat 86 6 0 series aat8660b detection voltage and delay time (25 ) parameter symbol test condition min typ max unit over charge threshold voltage 1 c v detect rising edge of supply voltage 4.300 4.350 4.400 v over charge release voltage 2 c v detect falling edge of supply voltage v c1 -0.30 v c1 -0.20 v c1 -0.10 v over discharge threshold voltage 1 d v detect falling edge of supply voltage 2.220 2.300 2.380 v over discharge release voltage 2 d v detect rising edge of supply voltage v d1 +0.6 v d1 +0.7 v d1 +0.8 v over charge delay time 1 c t v 6 . 3 v dd = to 4.5v 0.088 0.125 0.163 s over discharge delay time 1 d t v 6 . 3 v dd = to 2.2v 22.4 32.0 41.6 ms over current level 1 detection voltage 1 oc v detect rising edge of ?vn? pin voltage ( out d response with t oc1 delay time) 130 150 170 mv over current level 2 detection voltage 2 oc v detect rising edge of ?vn? pin voltage ( out d response with t oc2 delay time) 400 500 600 mv short circuit detection voltage short v v 0 . 3 v dd = , detect rising edge of ?vn? pin voltage ( out d response with short t delay time) 7 . 1 v dd ? 3 . 1 v dd ? 9 . 0 v dd ? v over current level 1 detection delay time 1 oc t v 0 . 3 v dd = 2.8 4.0 5.2 ms over current level 2 detection delay time 2 oc t room temp. ? low or high temp. ? v 0 . 3 v dd = 1.4 1.1 2.0 2.0 2.6 3.4 ms ms short circuit detection delay time short t v 0 . 3 v dd = 10 50 s charger detection voltage chr v detect rising edge of ? out d ? pin voltage (when v d1 v dd v d2 ) 0 . 2 ? 3 . 1 ? 6 . 0 ? v out c high level resistance coh r v 5 . 3 v dd = ; v 0 . 3 c out = ; v 0 vn = 1 2 10 k out c low level resistance col r v 5 . 4 v dd = ; v 5 . 0 c out = ; v 0 vn = 150 602 2,380 k out d high level resistance doh r v 5 . 3 v dd = ; v 0 . 3 d out = ; v 0 vn = 2.5 5.0 10.0 k out d low level resistance dol r v 8 . 1 v dd = ; v 5 . 0 d out = ; v 8 . 1 vn = 2.5 5.0 10.0 k internal resistance between vn and dd v vnd r v 8 . 1 v dd = ; v 0 vn = 100 300 900 k internal resistance between vn and gnd vng r v 5 . 3 v dd = ; v 5 . 3 vn = 10 20 40 k
advanced analog technology, inc. ? ?????? ? ? advanced analog technology, inc . ? page 6 of 25 v2.0 aat 86 6 0 series AAT8660C detection voltage and delay time (25 ) parameter symbol test condition min typ max unit over charge threshold voltage 1 c v detect rising edge of supply voltage 4.250 4.300 4.350 v over charge release voltage 2 c v detect falling edge of supply voltage v c1 -0.30 v c1 -0.20 v c1 -0.10 v over discharge threshold voltage 1 d v detect falling edge of supply voltage 2.220 2.300 2.380 v over discharge release voltage 2 d v detect rising edge of supply voltage v d1 -0.08 v d1 v d1 +0.08 v over charge delay time 1 c t v 6 . 3 v dd = to 4.5v 0.700 1.000 1.300 s over discharge delay time 1 d t v 6 . 3 v dd = to 2.2v 87.5 125.0 162.5 ms over current level 1 detection voltage 1 oc v detect rising edge of ?vn? pin voltage ( out d response with t oc1 delay time) 80 100 120 mv over current level 2 detection voltage 2 oc v detect rising edge of ?vn? pin voltage ( out d response with t oc2 delay time) 400 480 600 mv short circuit detection voltage short v v 0 . 3 v dd = , detect rising edge of ?vn? pin voltage ( out d response with short t delay time) 7 . 1 v dd ? 3 . 1 v dd ? 9 . 0 v dd ? v over current level 1 detection delay time 1 oc t v 0 . 3 v dd = 5.6 8.0 10.4 ms over current level 2 detection delay time 2 oc t room temp. ? low or high temp. ? v 0 . 3 v dd = 1.4 1.1 2.0 2.0 2.6 3.4 ms ms short circuit detection delay time short t v 0 . 3 v dd = 10 50 s charger detection voltage chr v detect rising edge of ? out d ? pin voltage (when v d1 v dd v d2 ) 0 . 2 ? 3 . 1 ? 6 . 0 ? v out c high level resistance coh r v 5 . 3 v dd = ; v 0 . 3 c out = ; v 0 vn = 1 2 10 k out c low level resistance col r v 5 . 4 v dd = ; v 5 . 0 c out = ; v 0 vn = 150 602 2,380 k out d high level resistance doh r v 5 . 3 v dd = ; v 0 . 3 d out = ; v 0 vn = 2.5 5.0 10.0 k out d low level resistance dol r v 8 . 1 v dd = ; v 5 . 0 d out = ; v 8 . 1 vn = 2.5 5.0 10.0 k internal resistance between vn and dd v vnd r v 8 . 1 v dd = ; v 0 vn = 100 300 900 k internal resistance between vn and gnd vng r v 5 . 3 v dd = ; v 5 . 3 vn = 10 20 40 k
advanced analog technology, inc. ? ?????? ? ? advanced analog technology, inc . ? page 7 of 25 v2.0 aat 86 6 0 series aat8660d detection voltage and delay time (25 ) parameter symbol test condition min typ max unit over charge threshold voltage 1 c v detect rising edge of supply voltage 4.230 4.280 4.330 v over charge release voltage 2 c v detect falling edge of supply voltage v c1 -0.30 v c1 -0.20 v c1 -0.10 v over discharge threshold voltage 1 d v detect falling edge of supply voltage 2.201 2.281 2.361 v over discharge release voltage 2 d v detect rising edge of supply voltage v d1 -0.08 v d1 v d1 +0.08 v over charge delay time 1 c t v 6 . 3 v dd = to 4.5v 0.700 1.000 1.300 s over discharge delay time 1 d t v 6 . 3 v dd = to 2.2v 87.5 125.0 162.5 ms over current level 1 detection voltage 1 oc v detect rising edge of ?vn? pin voltage ( out d response with t oc1 delay time) 110 130 150 mv over current level 2 detection voltage 2 oc v detect rising edge of ?vn? pin voltage ( out d response with t oc2 delay time) 400 490 600 mv short circuit detection voltage short v v 0 . 3 v dd = , detect rising edge of ?vn? pin voltage ( out d response with short t delay time) 7 . 1 v dd ? 3 . 1 v dd ? 9 . 0 v dd ? v over current level 1 detection delay time 1 oc t v 0 . 3 v dd = 5.6 8.0 10.4 ms over current level 2 detection delay time 2 oc t room temp. ? low or high temp. ? v 0 . 3 v dd = 1.4 1.1 2.0 2.0 2.6 3.4 ms ms short circuit detection delay time short t v 0 . 3 v dd = 10 50 s charger detection voltage chr v detect rising edge of ? out d ? pin voltage (when v d1 v dd v d2 ) 0 . 2 ? 3 . 1 ? 6 . 0 ? v out c high level resistance coh r v 5 . 3 v dd = ; v 0 . 3 c out = ; v 0 vn = 1 2 10 k out c low level resistance col r v 5 . 4 v dd = ; v 5 . 0 c out = ; v 0 vn = 150 602 2,380 k out d high level resistance doh r v 5 . 3 v dd = ; v 0 . 3 d out = ; v 0 vn = 2.5 5.0 10.0 k out d low level resistance dol r v 8 . 1 v dd = ; v 5 . 0 d out = ; v 8 . 1 vn = 2.5 5.0 10.0 k internal resistance between vn and dd v vnd r v 8 . 1 v dd = ; vn=0v 100 300 900 k internal resistance between vn and gnd vng r v 5 . 3 v dd = ; v 5 . 3 vn = 10 20 40 k
advanced analog technology, inc. ? ?????? ? ? advanced analog technology, inc . ? page 8 of 25 v2.0 aat 86 6 0 series aat8660e detection voltage and delay time (25 ) parameter symbol test condition min typ max unit over charge threshold voltage 1 c v detect rising edge of supply voltage 4.230 4.280 4.330 v over charge release voltage 2 c v detect falling edge of supply voltage v c1 -0.30 v c1 -0.20 v c1 -0.10 v over discharge threshold voltage 1 d v detect falling edge of supply voltage 2.201 2.281 2.361 v over discharge release voltage 2 d v detect rising edge of supply voltage v d1 +0.5 v d1 +0.6 v d1 +0.7 v over charge delay time 1 c t v 6 . 3 v dd = to 4.5v 0.700 1.000 1.300 s over discharge delay time 1 d t v 6 . 3 v dd = to 2.2v 87.5 125.0 162.5 ms over current level 1 detection voltage 1 oc v detect rising edge of ?vn? pin voltage ( out d response with t oc1 delay time) 80 100 120 mv over current level 2 detection voltage 2 oc v detect rising edge of ?vn? pin voltage ( out d response with t oc2 delay time) 400 480 600 mv short circuit detection voltage short v v 0 . 3 v dd = , detect rising edge of ?vn? pin voltage ( out d response with short t delay time) 7 . 1 v dd ? 3 . 1 v dd ? 9 . 0 v dd ? v over current level 1 detection delay time 1 oc t v 0 . 3 v dd = 5.6 8.0 10.4 ms over current level 2 detection delay time 2 oc t room temp. ? low or high temp. ? v 0 . 3 v dd = 1.4 1.1 2.0 2.0 2.6 3.4 ms ms short circuit detection delay time short t v 0 . 3 v dd = 10 50 s charger detection voltage chr v detect rising edge of ? out d ? pin voltage (when v d1 v dd v d2 ) -2.0 -1.3 -0.6 v out c high level resistance coh r 3.5v v dd = ; v 0 . 3 c out = ; 0v vn = 1 2 10 k out c low level resistance col r 4.5v v dd = ; v 5 . 0 c out = ; 0v vn = 150 602 2,380 k out d high level resistance doh r 3.5v v dd = ; v 0 . 3 d out = ; 0v vn = 2.5 5.0 10.0 k out d low level resistance dol r 1.8v v dd = ; v 5 . 0 d out = ; 1.8v vn = 2.5 5.0 10.0 k internal resistance between vn and dd v vnd r 1.8v v dd = ; 0v vn = 100 300 900 k internal resistance between vn and gnd vng r 3.5v v dd = ; 3.5v vn = 10 20 40 k ?
advanced analog technology, inc. ? ?????? ? ? advanced analog technology, inc . ? page 9 of 25 v2.0 aat 86 6 0 series aat8660f detection voltage and delay time (25 ) parameter symbol test condition min typ max unit over charge threshold voltage 1 c v detect rising edge of supply voltage 4.275 4.325 4.375 v over charge release voltage 2 c v detect falling edge of supply voltage v c1 -0.35 v c1 -0.25 v c1 -0.15 v over discharge threshold voltage 1 d v detect falling edge of supply voltage 2.420 2.500 2.580 v over discharge release voltage 2 d v detect rising edge of supply voltage v d1 +0.3 v d1 +0.4 v d1 +0.5 v over charge delay time 1 c t v 6 . 3 v dd = to 4.5v 0.700 1.000 1.300 s over discharge delay time 1 d t v 6 . 3 v dd = to 2.4v 87.5 125.0 162.5 ms over current level 1 detection voltage 1 oc v detect rising edge of ?vn? pin voltage ( out d response with t oc1 delay time) 80 100 120 mv over current level 2 detection voltage 2 oc v detect rising edge of ?vn? pin voltage ( out d response with t oc2 delay time) 400 480 600 mv short circuit detection voltage short v v 0 . 3 v dd = , detect rising edge of ?vn? pin voltage ( out d response with short t delay time) 7 . 1 v dd ? 3 . 1 v dd ? 9 . 0 v dd ? v over current level 1 detection delay time 1 oc t v 0 . 3 v dd = 5.6 8.0 10.4 ms over current level 2 detection delay time 2 oc t room temp. ? low or high temp. ? v 0 . 3 v dd = 1.4 1.1 2.0 2.0 2.6 3.4 ms ms short circuit detection delay time short t v 0 . 3 v dd = 10 50 s charger detection voltage chr v detect rising edge of ? out d ? pin voltage (when v d1 v dd v d2 ) 0 . 2 ? 3 . 1 ? 6 . 0 ? v out c high level resistance coh r v 5 . 3 v dd = ; v 0 . 3 c out = ; v 0 vn = 1 2 10 k out c low level resistance col r v 5 . 4 v dd = ; v 5 . 0 c out = ; v 0 vn = 150 602 2,380 k out d high level resistance doh r v 5 . 3 v dd = ; v 0 . 3 d out = ;vn=0v 2.5 5.0 10.0 k out d low level resistance dol r v 8 . 1 v dd = ; v 5 . 0 d out = ;vn=1.8v 2.5 5.0 10.0 k internal resistance between vn and dd v vnd r v 8 . 1 v dd = ; v 0 vn = 100 300 900 k internal resistance between vn and gnd vng r v 5 . 3 v dd = ; vn=3.5v 10 20 40 k ?
advanced analog technology, inc. ? ?????? ? ? advanced analog technology, inc . ? page 10 of 25 v2.0 aat 86 6 0 series aat8660g detection voltage and delay time (25 ) parameter symbol test condition min typ max unit over charge threshold voltage 1 c v detect rising edge of supply voltage 4.300 4.350 4.400 v over charge release voltage 2 c v detect falling edge of supply voltage v c1 -0.30 v c1 -0.20 v c1 -0.10 v over discharge threshold voltage 1 d v detect falling edge of supply voltage 2.220 2.300 2.380 v over discharge release voltage 2 d v detect rising edge of supply voltage v d1 +0.6 v d1 +0.7 v d1 +0.8 v over charge delay time 1 c t v 6 . 3 v dd = to 4.5v 0.088 0.125 0.163 s over discharge delay time 1 d t v 6 . 3 v dd = to 2.2v 22.4 32.0 41.6 ms over current level 1 detection voltage 1 oc v detect rising edge of ?vn? pin voltage ( out d response with t oc1 delay time) 180 200 220 mv over current level 2 detection voltage 2 oc v detect rising edge of ?vn? pin voltage ( out d response with t oc2 delay time) 400 510 600 mv short circuit detection voltage short v v 0 . 3 v dd = , detect rising edge of ?vn? pin voltage ( out d response with short t delay time) 7 . 1 v dd ? 3 . 1 v dd ? 9 . 0 v dd ? v over current level 1 detection delay time 1 oc t v 0 . 3 v dd = 2.8 4 5.2 ms over current level 2 detection delay time 2 oc t room temp. ? low or high temp. ? v 0 . 3 v dd = 1.4 1.1 2.0 2.0 2.6 3.4 ms ms short circuit detection delay time short t v 0 . 3 v dd = 10 50 s charger detection voltage chr v detect rising edge of ? out d ? pin voltage(when v d1 v dd v d2 ) 0 . 2 ? 3 . 1 ? 6 . 0 ? v out c high resistance level coh r v 5 . 3 v dd = ; v 0 . 3 c out = ;vn=0v 1 2 10 k out c low resistance level col r v 5 . 4 v dd = ; v 5 . 0 c out = ;vn=0v 150 602 2,380 k out d high resistance level doh r v 5 . 3 v dd = ; v 0 . 3 d out = ;vn=0v 2.5 5.0 10.0 k out d low resistance level dol r v 8 . 1 v dd = ; v 5 . 0 d out = ;vn=1.8v 2.5 5.0 10.0 k internal resistance between vn and dd v vnd r v 8 . 1 v dd = ; vn=0v 100 300 900 k internal resistance between vn and gnd vng r 3.5v v dd = ; vn=3.5v 10 20 40 k
advanced analog technology, inc. ? ?????? ? ? advanced analog technology, inc . ? page 11 of 25 v2.0 aat 86 6 0 series aat8660h detection voltage and delay time (25 ) parameter symbol test condition min typ max unit over charge threshold voltage 1 c v detect rising edge of supply voltage 4.250 4.300 4.350 v over charge release voltage 2 c v detect falling edge of supply voltage v c1 -0.30 v c1 -0.20 v c1 -0.10 v over discharge threshold voltage 1 d v detect falling edge of supply voltage 2.220 2.300 2.380 v over discharge release voltage 2 d v detect rising edge of supply voltage v d1 -0.08 v d1 v d1 +0.08 v over charge delay time 1 c t v 6 . 3 v dd = to 4.5v 0.700 1.000 1.300 s over discharge delay time 1 d t v 6 . 3 v dd = to 2.2v 87.5 125.0 162.5 ms over current level 1 detection voltage 1 oc v detect rising edge of ?vn? pin voltage ( out d response with t oc1 delay time) 130 150 170 mv over current level 2 detection voltage 2 oc v detect rising edge of ?vn? pin voltage ( out d response with t oc2 delay time) 400 500 600 mv short circuit detection voltage short v v 0 . 3 v dd = , detect rising edge of ?vn? pin voltage ( out d response with short t delay time) 7 . 1 v dd ? 3 . 1 v dd ? 9 . 0 v dd ? v over current level 1 detection delay time 1 oc t v 0 . 3 v dd = 5.6 8.0 10.4 ms over current level 2 detection delay time 2 oc t room temp. ? low or high temp. ? v 0 . 3 v dd = 1.4 1.1 2.0 2.0 2.6 3.4 ms ms short circuit detection delay time short t v 0 . 3 v dd = 10 50 s charger detection voltage chr v detect rising edge of ? out d ? pin voltage (when v d1 v dd v d2 ) -2.0 -1.3 -0.6 v out c high resistance level coh r v 5 . 3 v dd = ; v 0 . 3 c out = ;vn=0v 1 2 10 k out c low resistance level col r v 5 . 4 v dd = ; v 5 . 0 c out = ;vn=0v 150 602 2,380 k out d high resistance level doh r v 5 . 3 v dd = ; v 0 . 3 d out = ;vn=0v 2.5 5.0 10.0 k out d low resistance level dol r v 8 . 1 v dd = ; v 5 . 0 d out = ;vn=1.8v 2.5 5.0 10.0 k internal resistance between vn and dd v vnd r v 8 . 1 v dd = ; vn=0v 100 300 900 k internal resistance between vn and gnd vng r v 5 . 3 v dd = ; vn=3.5v 10 20 40 k
advanced analog technology, inc. ? ?????? ? ? advanced analog technology, inc . ? page 12 of 25 v2.0 aat 86 6 0 series aat8660i detection voltage and delay time (25 ) parameter symbol test condition min typ max unit over charge threshold voltage 1 c v detect rising edge of supply voltage 4.250 4.300 4.350 v over charge release voltage 2 c v detect falling edge of supply voltage v c1 -0.30 v c1 -0.20 v c1 -0.10 v over discharge threshold voltage 1 d v detect falling edge of supply voltage 2.220 2.300 2.380 v over discharge release voltage 2 d v detect rising edge of supply voltage v d1 -0.08 v d1 v d1 +0.08 v over charge delay time 1 c t v 6 . 3 v dd = to 4.5v 0.700 1.000 1.300 s over discharge delay time 1 d t v 6 . 3 v dd = to 2.2v 87.5 125.0 162.5 ms over current level 1 detection voltage 1 oc v detect rising edge of ?vn? pin voltage ( out d response with t oc1 delay time) 110 130 150 mv over current level 2 detection voltage 2 oc v detect rising edge of ?vn? pin voltage ( out d response with t oc2 delay time) 400 490 600 mv short circuit detection voltage short v v 0 . 3 v dd = , detect rising edge of ?vn? pin voltage ( out d response with short t delay time) 7 . 1 v dd ? 3 . 1 v dd ? 9 . 0 v dd ? v over current level 1 detection delay time 1 oc t v 0 . 3 v dd = 5.6 8.0 10.4 ms over current level 2 detection delay time 2 oc t room temp. ? low or high temp. ? v 0 . 3 v dd = 1.4 1.1 2.0 2.0 2.6 3.4 ms ms short circuit detection delay time short t v 0 . 3 v dd = 10 50 s charger detection voltage chr v detect rising edge of ? out d ? pin voltage (when v d1 v dd v d2 ) 0 . 2 ? 3 . 1 ? 6 . 0 ? v out c high resistance level coh r v 5 . 3 v dd = ; 3.0v c out = ;vn=0v 1 2 10 k out c low resistance level col r v 5 . 4 v dd = ; v 5 . 0 c out = ;vn=0v 150 602 2,380 k out d high resistance level doh r v 5 . 3 v dd = ; v 0 . 3 d out = ;vn=0v 2.5 5.0 10.0 k out d low resistance level dol r v 8 . 1 v dd = ; v 5 . 0 d out = ;vn=1.8v 2.5 5.0 10.0 k internal resistance between vn and dd v vnd r v 8 . 1 v dd = ; vn=0v 100 300 900 k internal resistance between vn and gnd vng r v 5 . 3 v dd = ; vn=3.5v 10 20 40 k ?
advanced analog technology, inc. ? ?????? ? ? advanced analog technology, inc . ? page 13 of 25 v2.0 aat 86 6 0 series aat8660j detection voltage and delay time (25 ) parameter symbol test condition min typ max unit over charge threshold voltage 1 c v detect rising edge of supply voltage 4.230 4.280 4.330 v over charge release voltage 2 c v detect falling edge of supply voltage v c1 -0.30 v c1 -0.20 v c1 -0.10 v over discharge threshold voltage 1 d v detect falling edge of supply voltage 2.201 2.281 2.361 v over discharge release voltage 2 d v detect rising edge of supply voltage v d1 -0.08 v d1 v d1 +0.08 v over charge delay time 1 c t v 6 . 3 v dd = to 4.5v 0.700 1.000 1.300 s over discharge delay time 1 d t v 6 . 3 v dd = to 2.2v 87.5 125.0 162.5 ms over current level 1 detection voltage 1 oc v detect rising edge of ?vn? pin voltage ( out d response with t oc1 delay time) 180 200 220 mv over current level 2 detection voltage 2 oc v detect rising edge of ?vn? pin voltage ( out d response with t oc2 delay time) 400 510 600 mv short circuit detection voltage short v v 0 . 3 v dd = , detect rising edge of ?vn? pin voltage ( out d response with short t delay time) 7 . 1 v dd ? 3 . 1 v dd ? 9 . 0 v dd ? v over current level 1 detection delay time 1 oc t v 0 . 3 v dd = 5.6 8.0 10.4 ms over current level 2 detection delay time 2 oc t room temp. ? low or high temp. ? v 0 . 3 v dd = 1.4 1.1 2.0 2.0 2.6 3.4 ms ms short circuit detection delay time short t v 0 . 3 v dd = 10 50 s charger detection voltage chr v detect rising edge of ? out d ? pin voltage (when v d1 v dd v d2 ) -2.0 -1.3 -0.6 v out c high level resistance coh r v 5 . 3 v dd = ; v 0 . 3 c out = ;vn=0v 1 2 10 k out c low level resistance col r v 5 . 4 v dd = ; v 5 . 0 c out = ;vn=0v 150 602 2,380 k out d high level resistance doh r v 5 . 3 v dd = ; v 0 . 3 d out = ;vn=0v 2.5 5.0 10.0 k out d low level resistance dol r v 8 . 1 v dd = ; v 5 . 0 d out = ;vn=1.8v 2.5 5.0 10.0 k internal resistance between vn and dd v vnd r v 8 . 1 v dd = ; vn=0v 100 300 900 k internal resistance between vn and gnd vng r v 5 . 3 v dd = ; vn=3.5v 10 20 40 k
advanced analog technology, inc. ? ?????? ? ? advanced analog technology, inc . ? page 14 of 25 v2.0 aat 86 6 0 series aat8660k detection voltage and delay time (25 ) parameter symbol test condition min typ max unit over charge threshold voltage 1 c v detect rising edge of supply voltage 4.20 4.25 4.30 v over charge release voltage 2 c v detect falling edge of supply voltage v c1 -0.3 v c1 -0.2 v c1 -0.1 v over discharge threshold voltage 1 d v detect falling edge of supply voltage 2.201 2.281 2.361 v over discharge release voltage 2 d v detect rising edge of supply voltage v d1 +0.5 v d1 +0. 6 v d1 +0.7 v over charge delay time 1 c t v 6 . 3 v dd = to 4.5v 0.700 1.000 1.300 s over discharge delay time 1 d t v 6 . 3 v dd = to 2.2v 87.5 125 162.5 ms over current level 1 detection voltage 1 oc v detect rising edge of ?vn? pin voltage ( out d response with t oc1 delay time) 80 100 120 mv over current level 2 detection voltage 2 oc v detect rising edge of ?vn? pin voltage ( out d response with t oc2 delay time) 400 480 600 mv short circuit detection voltage short v v 0 . 3 v dd = , detect rising edge of ?vn? pin voltage ( out d response with short t delay time) 7 . 1 v dd ? . 1 v dd ? 9 . 0 v dd ? v over current level 1 detection delay time 1 oc t v 0 . 3 v dd = 5.6 8.0 10.4 ms over current level 2 detection delay time 2 oc t room temp. ? low or high temp. ? v 0 . 3 v dd = 1.4 1.1 2.0 2.0 2.6 3.4 ms ms short circuit detection delay time short t v 0 . 3 v dd = 10 50 s charger detection voltage chr v detect rising edge of ? out d ? pin voltage (when v d1 v dd v d2 ) -2.0 -1.3 -0.6 v out c high level resistance coh r v 5 . 3 v dd = ; v 0 . 3 c out = ;vn=0v 1 2 10 k ? out c low level resistance col r v 5 . 4 v dd = ; v 5 . 0 c out = ;vn=0v 150 602 2380 k ? out d high level resistance doh r v 5 . 3 v dd = ; v 0 . 3 d out = ;vn=0v 2.5 5.0 10.0 k ? out d low level resistance dol r v 8 . 1 v dd = ; v 5 . 0 d out = ;vn=1.8v 2.5 5.0 10.0 k ? internal resistance between vn and dd v vnd r v 8 . 1 v dd = ; vn=0v 100 300 900 k ? internal resistance between vn and gnd vng r v 5 . 3 v dd = ; vn=3.5v 10 20 40 k ?
advanced analog technology, inc. ? ?????? ? ? advanced analog technology, inc . ? page 15 of 25 v2.0 aat 86 6 0 series summary of aat8660 detection voltage and delay time ( c 25 ) parameter symbol device min typ max unit v c1 aat8660a 4.275 4.325 4.375 v aat8660b 4.30 4.35 4.40 v AAT8660C 4.25 4.3 4.35 v aat8660d 4.23 4.28 4.33 v aat8660e 4.23 4.28 4.33 v aat8660f 4.275 4.325 4.375 v aat8660g 4.3 4.35 4.4 v aat8660h 4.25 4.3 4.35 v aat8660i 4.25 4.3 4.35 v aat8660j 4.23 4.28 4.33 v over charge threshold voltage aat8660k 4.20 4.25 4.30 v v c2 aat8660a v c1 -0.35 v c1 -0.25 v c1 -0.15 v aat8660b v c1 -0.3 v c1 -0.2 v c1 -0.1 v AAT8660C v c1 -0.3 v c1 -0.2 v c1 -0.1 v aat8660d v c1 -0.3 v c1 -0.2 v c1 -0.1 v aat8660e v c1 -0.3 v c1 -0.2 v c1 -0.1 v aat8660f v c1 -0.35 v c1 -0.25 v c1 -0.15 v aat8660g v c1 -0.3 v c1 -0.2 v c1 -0.1 v aat8660h v c1 -0.3 v c1 -0.2 v c1 -0.1 v aat8660i v c1 -0.3 v c1 -0.2 v c1 -0.1 v aat8660j v c1 -0.3 v c1 -0.2 v c1 -0.1 v over charge release voltage aat8660k v c1 -0.3 v c1 -0.2 v c1 -0.1 v v d1 aat8660a 2.420 2.5 2.580 v aat8660b 2.220 2.3 2.380 v AAT8660C 2.220 2.3 2.380 v aat8660d 2.201 2.281 2.361 v aat8660e 2.201 2.281 2.361 v aat8660f 2.420 2.5 2.580 v aat8660g 2.220 2.3 2.380 v aat8660h 2.220 2.3 2.380 v aat8660i 2.220 2.3 2.380 v aat8660j 2.201 2.281 2.361 v over discharge threshold voltage aat8660k 2.201 2.281 2.361 v
advanced analog technology, inc. ? ?????? ? ? advanced analog technology, inc . ? page 16 of 25 v2.0 aat 86 6 0 series summary of aat8660 detection voltage and delay time (25 ) parameter symbol device min typ max unit v d2 aat8660a v d1 +0.3 v d1 +0.4 v d1 +0.5 v aat8660b v d1 +0.6 v d1 +0.7 v d1 +0.8 v AAT8660C v d1 -0.08 v d1 v d1 +0.08 v aat8660d v d1 -0.08 v d1 v d1 +0.08 v aat8660e v d1 +0.5 v d1 +0.6 v d1 +0.7 v aat8660f v d1 +0.3 v d1 +0.4 v d1 +0.5 v aat8660g v d1 +0.6 v d1 +0.7 v d1 +0.8 v aat8660h v d1 -0.08 v d1 v d1 +0.08 v aat8660i v d1 -0.08 v d1 v d1 +0.08 v aat8660j v d1 -0.08 v d1 v d1 +0.08 v over discharge release voltage aat8660k v d1 +0.5 v d1 +0.6 v d1 +0.7 v t c1 aat8660a 0.700 1 1.300 s aat8660b 0.088 0.125 0.163 s AAT8660C 0.700 1 1.300 s aat8660d 0.700 1 1.300 s aat8660e 0.700 1 1.300 s aat8660f 0.700 1 1.300 s aat8660g 0.088 0.125 0.163 s aat8660h 0.700 1 1.300 s aat8660i 0.700 1 1.300 s aat8660j 0.700 1 1.300 s over charge delay time aat8660k 0.700 1 1.300 s t d1 aat8660a 87.5 125 162.5 ms aat8660b 22.4 32 41.6 ms AAT8660C 87.5 125 162.5 ms aat8660d 87.5 125 162.5 ms aat8660e 87.5 125 162.5 ms aat8660f 87.5 125 162.5 ms aat8660g 22.4 32 41.6 ms aat8660h 87.5 125 162.5 ms aat8660i 87.5 125 162.5 ms aat8660j 87.5 125 162.5 ms over discharge delay time aat8660k 87.5 125 162.5 ms
advanced analog technology, inc. ? ?????? ? ? advanced analog technology, inc . ? page 17 of 25 v2.0 aat 86 6 0 series summary of aat8660 detection voltage and delay time (25 ) parameter symbol device min typ max unit v oc1 aat8660a 130 150 170 mv aat8660b 130 150 170 mv AAT8660C 80 100 120 mv aat8660d 110 130 150 mv aat8660e 80 100 120 mv aat8660f 80 100 120 mv aat8660g 180 200 220 mv aat8660h 130 150 170 mv aat8660i 110 130 150 mv aat8660j 180 200 220 mv over current level 1 detection voltage aat8660k 80 100 120 mv v oc2 aat8660a 400 500 600 mv aat8660b 400 500 600 mv AAT8660C 400 480 600 mv aat8660d 400 490 600 mv aat8660e 400 480 600 mv aat8660f 400 480 600 mv aat8660g 400 510 600 mv aat8660h 400 500 600 mv aat8660i 400 490 600 mv aat8660j 400 510 600 mv over current level 2 detection voltage aat8660k 400 480 600 mv t oc1 aat8660a 5.6 8 10.4 ms aat8660b 2.8 4 5.2 ms AAT8660C 5.6 8 10.4 ms aat8660d 5.6 8 10.4 ms aat8660e 5.6 8 10.4 ms aat8660f 5.6 8 10.4 ms aat8660g 2.8 4 5.2 ms aat8660h 5.6 8 10.4 ms aat8660i 5.6 8 10.4 ms aat8660j 5.6 8 10.4 ms over current level 1 detection delay time aat8660k 5.6 8 10.4 ms
advanced analog technology, inc. ? ?????? ? ? advanced analog technology, inc . ? page 18 of 25 v2.0 aat 86 6 0 series timing chart aat8660 (charge and discharge) chr v d1 v d2 v c2 v c1 v dd v dd v vn dd v 1 c t 1 d t out c out d 1 c t 1 d t dd v gnd gnd
advanced analog technology, inc. ? ?????? ? ? advanced analog technology, inc . ? page 19 of 25 v2.0 aat 86 6 0 series timing chart aat8660 (unusual charge current, over current, short circuit) dd v dd v out c out d short t 1 oc t 1 oc t 2 oc t 2 oc t 1 c t dd v dd v dd v short v 1 c v 2 c v 2 d v 1 d v 2 oc v 1 oc v chr v time
advanced analog technology, inc. ? ?????? ? ? advanced analog technology, inc . ? page 20 of 25 v2.0 aat 86 6 0 series typical application li battery gnd vn out d out c 1 c f 1 . 0 1 r 2 r 100 k 1 + ? dd v
advanced analog technology, inc. ? ?????? ? ? advanced analog technology, inc . ? page 21 of 25 v2.0 aat 86 6 0 series package dimension
advanced analog technology, inc. ? ?????? ? ? advanced analog technology, inc . ? page 22 of 25 v2.0 aat 86 6 0 series package dimensions (cont.) variation (all dimensions shown in millimeters) symbol min typ max a ------ ------ 1.45 a1 ------ ------ 0.15 a2 0.90 1.15 1.30 b 0.30 ------ 0.50 c 0.08 ------ 0.22 d 2.90 bsc e 2.80 bsc e1 1.60 bsc e 0.95 bsc e1 1.90 bsc l 0.30 0.45 0.60 l1 0.60 ref l2 0.25 bsc r 0.10 ------ ------ r1 0.10 ------ 0.25 0 4 8 1 5 10 15 note: 1 jedec outline: mo-178 ab
advanced analog technology, inc. ? ?????? ? ? advanced analog technology, inc . ? page 23 of 25 v2.0 aat 86 6 0 series tape and reel packing method: 3,000pcs/reel, 5 reels/box
advanced analog technology, inc. ? ?????? ? ? advanced analog technology, inc . ? page 24 of 25 v2.0 aat 86 6 0 series tape and reel (cont.) x.xxx x 0.0025 x.xxx 0.006 x.xx 0.025 x.x 0.10 x 0.25 unit: millimeters
advanced analog technology, inc. ? ?????? ? ? advanced analog technology, inc . ? page 25 of 25 v2.0 aat 86 6 0 series part marking previous sot26 top marking axxx note: sot26 has no back marking. current sot26 top marking axx ordering information

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